publication date : oct 2011 1 < silicon rf power mos fet ( discrete ) > rd0 5mmp1 rohs compliance, silicon mosfet power transistor, 941mhz , 5 .5 w description rd05mmp1 is a mos fet type transistor specifically designed for uhf rf power amplifiers applications. features ? high power g ain: pout> 5.5 w, gp> 8.9 db@vdd= 7.2 v,f= 941m hz ? high efficiency: 43 % min . (941mhz) ? no gate protection diode application for output stage of high power amplifiers in 941mhz band mobile radio sets. rohs compliant rd05mmp1 is a rohs complian t product. rohs compliance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. however, it is applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type sol ders (i.e. tin - lead older alloys containing more than85% lead.) absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit vd ss drain to source voltage vgs=0v 40 v vgss gate to source voltage vds=0v - 5 to +10 v p ch channel dissipation tc=25 c 73 w pin input power zg=zl=50 ? 1.4 w id drain current - 3 a t ch junction temperature - 150 c tstg storage temperature - - 40 to +1 25 c rth j - c thermal resistance junction to case 1.7 c/w note: above parameters are gua ranteed independently. index mark [gate] 1 . 8 + / - 0 . 1 0 . 7 + / - 0 . 1 terminal no. (a)drain [output] (b)source [gnd] (c)gate [input] (d)source (b) (b) 0.95+/-0.2 2.6+/-0.2 4 . 2 + / - 0 . 2 5 . 6 + / - 0 . 2 7.0+/-0.2 (c) 0 . 6 5 + / - 0 . 2 (a) 8.0+/-0.2 6 . 2 + / - 0 . 2 notes: 1. ( ) typical value unit:mm (d) 0.2+/-0.05 top view side view bottom view side view ( 3 . 6 ) (4.5) s t a n d o f f = m a x 0 . 0 5 detail a detail a outline drawing
< silicon rf power mos fet ( discrete ) > rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz , 5 .5 w publication date : oct 2011 2 electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =1 7 v, v gs =0v - - 10 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold voltage v ds =1 2 v, i ds =1ma 0.5 - 2.5 v pout output power 5.5 6 - w ? d drain efficiency f= 941 mhz , v dd = 7.2 v pin= 0.7w,idq=1.0a 43 - - % vswrt load vswr tolerance v dd =9.5v,po=5.5w( pin control ) f=941mhz,idq=1.0a,zg=50 ? load v swr=20:1(all phase) no destroy - note : above parameters , ratings , limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz , 5 .5 w publication date : oct 2011 3 typical characteristics channel dissipation vs. ambient temperature 0 10 20 30 40 50 60 0 40 80 120 160 200 ambient temperature ta(deg:c.) c h a n n e l d i s s i p a t i o n p c h ( w ) , on pcb with termal sheet and heat-sink *pcb: glass epoxy (t=0.8 mm) thermal sheet: geltec cooh-4000(0.5) free air vgs-ids characteristics 0 2 4 6 8 0 1 2 3 4 5 vgs(v) i d s ( a ) , g m ( s ) ta=+25c vds=10v ids gm vds-ids characteristics 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 vds(v) i d s ( a ) ta=+25c vgs=4.5v vgs=4.0v vgs=3.5v vgs=3.0v vgs=5.0v vds vs. ciss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) c i s s ( p f ) ta=+25c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) c o s s ( p f ) ta=+25c f=1mhz vds vs. crss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) c r s s ( p f ) ta=+25c f=1mhz
< silicon rf power mos fet ( discrete ) > rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz , 5 .5 w publication date : oct 2011 4 typical characteristics pin-po characteristics @f=941mhz 0 10 20 30 40 5 10 15 20 25 30 35 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 d ( % ) ta=+25c f=941mhz vdd=7.2v idq=1.0a po gp pin-po characteristics @f=941mhz 0 5 10 15 20 0.0 0.5 1.0 1.5 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d ( % ) po d idd ta=25c f=941mhz vdd=7.2v idq=1.0a vdd-po characteristics @f=941mhz 0 2 4 6 8 10 4 6 8 10 12 vdd(v) p o ( w ) 0 1 2 3 4 5 i d d ( a ) po idd ta=25c f=941mhz pin=0.7w idq=1.0a zg=zi=50 ohm vgs-ids charactoristics 2 0 2 4 6 8 0 1 2 3 4 5 vgs(v) i d s ( a ) , g m ( s ) vds=10v tc=-25~+75c +25c +75c -25c
< silicon rf power mos fet ( discrete ) > rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz , 5 .5 w publication date : oct 2011 5 test circuit ( f=941mhz) 20mm 6mm 130pf 4.7k ohm c1 c2 9pf 3mm w w rd05mmp1 941mhz 1pf 8mm 12mm vdd vgg rf-in rf-out 0.5mm l note:boad material ptfe substrate micro strip line width=2.2mm/50 er:2.6 t=0.8mm w:line width=1.0mm spring gilding) x:3mm y:2.5mm l:24.9nh 6turns d:0.43mm 2.46 mm(outside diameter) c grm39 mark c:grm708 c1 c2:1000 f 2pf* 21mm 130pf 22 f 50v 12pf* 4mm 9pf 2pf* 19mm 19mm
< silicon rf power mos fet ( discrete ) > rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz , 5 .5 w publication date : oct 2011 6 rd05mmp1 s-parameter data (@vdd=7.2v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.841 -169.5 7.706 82.9 0.020 -3.4 0.806 -171.5 125 0.845 -171.5 6.148 78.7 0.020 -5.0 0.817 -172.9 150 0.846 -172.4 5.024 75.0 0.019 -6.5 0.810 -174.2 175 0.848 -173.3 4.240 72.0 0.018 -6.6 0.817 -174.7 200 0.848 -173.7 3.669 69.4 0.017 -7.1 0.822 -175.0 225 0.852 -174.5 3.227 66.5 0.017 -8.5 0.835 -175.1 250 0.858 -174.9 2.856 63.6 0.017 -8.9 0.841 -175.3 275 0.861 -175.2 2.543 60.8 0.016 -8.7 0.838 -175.8 300 0.866 -175.3 2.279 58.6 0.015 -8.2 0.840 -176.2 325 0.872 -175.5 2.068 56.5 0.014 -3.2 0.849 -176.4 350 0.877 -175.5 1.886 54.1 0.013 -4.3 0.858 -176.8 375 0.878 -176.2 1.735 51.5 0.013 -3.6 0.868 -177.0 400 0.880 -176.6 1.584 49.3 0.012 -0.8 0.869 -177.4 425 0.886 -177.1 1.456 47.4 0.011 2.0 0.868 -177.5 450 0.891 -177.2 1.343 45.9 0.011 7.3 0.874 -177.8 475 0.897 -177.2 1.249 44.1 0.011 10.5 0.880 -178.2 500 0.900 -177.3 1.164 42.2 0.010 16.6 0.886 -178.7 525 0.904 -177.6 1.086 40.3 0.010 19.9 0.893 -179.1 550 0.905 -178.1 1.010 38.7 0.010 25.6 0.893 -179.0 575 0.907 -178.6 0.945 37.2 0.010 30.6 0.897 -179.4 600 0.913 -178.9 0.889 35.8 0.011 35.9 0.901 -179.9 625 0.918 -178.9 0.833 34.6 0.011 40.4 0.908 179.6 650 0.920 -178.9 0.786 33.2 0.011 46.3 0.911 179.2 675 0.920 -179.1 0.741 31.9 0.012 49.2 0.909 179.0 700 0.925 -179.5 0.698 30.6 0.012 51.0 0.915 178.6 725 0.925 179.8 0.660 29.4 0.013 57.5 0.916 178.4 750 0.927 179.5 0.625 28.3 0.013 58.5 0.917 177.9 775 0.931 179.2 0.595 27.1 0.014 60.4 0.921 177.4 800 0.929 179.3 0.565 26.3 0.015 62.2 0.925 177.0 825 0.936 179.2 0.537 25.4 0.016 67.1 0.924 176.7 850 0.936 179.0 0.513 24.6 0.017 67.9 0.923 176.6 875 0.935 178.5 0.488 23.6 0.019 68.4 0.921 176.3 900 0.935 178.1 0.469 22.6 0.020 67.0 0.922 175.5 925 0.933 177.9 0.446 21.7 0.023 64.2 0.919 175.0 950 0.938 177.8 0.426 20.3 0.024 52.9 0.906 175.4 975 0.943 177.8 0.404 20.3 0.019 51.8 0.920 176.6 1000 0.943 177.5 0.388 19.9 0.019 61.8 0.933 176.0 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz , 5 .5 w publication date : oct 2011 7 rd05mmp1 s-parameter data (@vdd=7.2v, id=900ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.878 -174.2 7.474 85.7 0.014 4.3 0.869 -176.3 125 0.884 -175.6 6.046 81.9 0.014 2.9 0.865 -176.9 150 0.880 -176.9 4.919 78.9 0.014 3.3 0.865 -177.5 175 0.877 -177.4 4.153 77.5 0.013 4.7 0.872 -177.9 200 0.879 -177.7 3.636 76.1 0.013 8.8 0.873 -178.3 225 0.888 -178.2 3.246 73.8 0.013 4.2 0.875 -178.5 250 0.888 -178.7 2.912 71.1 0.013 7.9 0.874 -178.6 275 0.884 -179.1 2.598 69.0 0.012 9.1 0.869 -178.8 300 0.884 -179.2 2.351 67.4 0.012 11.5 0.872 -178.9 325 0.891 -179.6 2.152 66.0 0.012 13.3 0.882 -179.2 350 0.893 -179.7 1.995 64.1 0.012 18.1 0.884 -179.4 375 0.897 179.8 1.849 62.2 0.011 16.1 0.886 -179.5 400 0.897 179.7 1.708 60.0 0.012 20.8 0.883 -179.3 425 0.896 179.6 1.580 58.5 0.012 25.7 0.883 -179.6 450 0.902 179.3 1.475 57.1 0.012 26.7 0.886 -179.7 475 0.903 178.9 1.388 55.6 0.012 30.8 0.892 180.0 500 0.906 178.7 1.308 53.7 0.012 33.2 0.893 179.9 525 0.905 178.5 1.222 52.1 0.012 35.6 0.894 179.8 550 0.906 178.4 1.152 50.6 0.012 38.7 0.896 179.7 575 0.910 178.2 1.086 49.4 0.012 42.5 0.898 179.6 600 0.914 177.9 1.030 48.2 0.012 45.7 0.902 179.2 625 0.915 177.5 0.978 46.6 0.013 46.2 0.906 179.1 650 0.916 177.3 0.928 45.1 0.013 52.5 0.906 179.0 675 0.917 177.3 0.877 43.8 0.014 53.1 0.906 179.1 700 0.919 177.2 0.832 43.0 0.015 55.3 0.905 178.8 725 0.921 176.9 0.798 41.7 0.015 56.8 0.908 178.5 750 0.925 176.6 0.759 40.5 0.015 59.3 0.911 178.1 775 0.924 176.5 0.725 39.2 0.016 59.2 0.916 177.9 800 0.926 176.3 0.694 38.3 0.016 62.2 0.916 178.0 825 0.927 176.1 0.661 37.2 0.017 63.6 0.921 178.1 850 0.929 175.8 0.634 36.5 0.018 64.2 0.918 177.9 875 0.929 175.6 0.611 35.5 0.019 65.1 0.917 177.4 900 0.931 175.5 0.585 34.3 0.019 66.8 0.921 177.0 925 0.930 175.2 0.562 33.4 0.020 66.6 0.923 176.8 950 0.928 175.2 0.539 32.6 0.021 65.2 0.928 176.9 975 0.932 174.8 0.518 31.9 0.022 67.9 0.930 177.3 1000 0.937 174.8 0.496 31.1 0.022 68.8 0.926 177.0 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz , 5 .5 w publication date : oct 2011 8 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz , 5 .5 w publication date : oct 2011 9 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporat ion puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to giv e due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other righ ts, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagrams, charts, program s, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of t hese material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semicon ductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility fo r any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the a pplicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductors are not designe d or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to r eprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country ot her than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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